The first phase of a third-generation semiconductor industry-university-research cluster project was officially put into use in Harbin New Zone in Harbin, capital city of Northeast China's Heilongjiang province, on Aug 18.
 
The successful operation of the project indicates that an integrated circuit industry belt integrating R&D, production, and manufacturing has been formed in Harbin New Zone.
 
The project is jointly funded by Harbin New Zone and Harbin Keyou Semiconductor Industry Equipment and Technology Research Institute Co with an investment of 1 billion yuan ($150.04 million).
 
Founded in 2018, Harbin Keyou Semiconductor Industry Equipment and Technology Research Institute Co is a national high-tech enterprise focusing on the research and development of third-generation semiconductor equipment, substrate manufacturing, device design, technology transfer, and the commercialization of scientific research achievements.
 
The project will build a research cluster for the commercialization of scientific and technological achievements and the industrial application of the entire semiconductor industrial chain and build a national third-generation semiconductor equipment and material innovation center.
 
It started construction in July 2021, with its production plant covering a total area of 20,000 square meters.
 
"A total of 100 crystal growth furnaces have been installed in the production workshop and 100 will be installed in the future," said Duan Shuguo, deputy general manager of Harbin Keyou Semiconductor Industry Equipment and Technology Research Institute Co.
 
"An annual production capacity of 100,000 6-inch silicon carbide substrates is expected after the project is operating at full capacity by the end of the year." Duan added.